View APT40N60LCF_1169086.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

600V 40A 0.110 APT40N60B2CF APT40N60LCF APT40N60B2CFG* APT40N60LCFG*
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
C OLMOS O
Power Semiconductors
Super Junction FREDFET
T-MaxTM
* Ultra Low RDS(ON) * Low Miller Capacitance * Ultra Low Gate Charge, Qg * Avalanche Energy Rated * Extreme dv/dt Rated
* Intrinsic Fast-Recovery Body Diode * Extreme Low Reverse Recovery Charge * Ideal For ZVS Applications * Popular T-MAXTM or TO-264 Package
TO-264
D G S
Unless stated otherwise, Microsemi discrete FREDFETs contain a single FREDFET die. This device is made with two parallel FREDFET die. It is intended for switch-mode operation. It is not suitable for linear mode operation.
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS PD TJ,TSTG TL dv/ dt IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25C Continuous Drain Current @ TC = 100C Pulsed Drain Current
1
All Ratings: TC = 25C unless otherwise specified.
APT40N60B2CF(G)_LCF(G)
UNIT Volts
600 40 26 80 30 417 3.33 -55 to 150 260 80 20
7 4
Amps
Gate-Source Voltage Continuous Total Power Dissipation @ TC = 25C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Drain-Source Voltage slope (VDS = 480V, ID = 40A, TJ = 125C) Avalanche Current
7
Volts Watts W/C C V/ns Amps mJ
Repetitive Avalanche Energy
1 690
Single Pulse Avalanche Energy
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVDSS RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 500A) Drain-Source On-State Resistance
2
MIN 600
TYP
MAX
UNIT Volts
(VGS = 10V, ID = 20A)
0.110 4.2 3400 100 3 4 5
Ohms A nA Volts
6-2006 050-7236 Rev B
Zero Gate Voltage Drain Current (VDS = 600V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 600V, VGS = 0V, TC = 150C) Gate-Source Leakage Current (VGS = 20V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 2mA)
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Microsemi Website - http://www.microsemi.com
"COOLMOSTM comprise a new family of transistors developed by Infineon Technologies AG. "COOLMOS" is a trademark of Infineon Technologies AG."
DYNAMIC CHARACTERISTICS
Symbol Ciss Coss Crss Qg Qgd td(on) td(off) tf Eon Eoff Eon Eoff Symbol IS VSD
dv
APT40N60B2CF(G)_LCF(G)
Test Conditions
VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 300V ID = 40A @ 25C RESISTIVE SWITCHING VGS = 15V VDD = 380V ID = 40A @ 25C RG = 1.8
6
Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge
3
MIN
TYP
MAX
UNIT pF
5040 1365 80 185 36 115 12 15 60 6.4 725 365 1195 440
MIN TYP MAX
Qgs
Gate-Source Charge Gate-Drain ("Miller ") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current Diode Forward Voltage Peak Diode Recovery
dv
1 2
nC
tr
ns
INDUCTIVE SWITCHING @ 25C VDD = 400V, VGS = 15V ID = 40A, RG = 5 INDUCTIVE SWITCHING @ 125C VDD = 400V, VGS = 15V ID = 40A, RG = 5
6
J
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
UNIT Amps Volts V/ns ns C Amps
40 80 2.4 40
Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C MIN
ISM
(Body Diode) (VGS = 0V, IS = -40A)
5
/dt
/dt
t rr Q rr IRRM
Reverse Recovery Time (IS = -40A, di/dt = 100A/s) Reverse Recovery Charge (IS = -40A, /dt = 100A/s) Peak Recovery Current (IS = -40A, /dt = 100A/s) Characteristic Junction to Case Junction to Ambient
di di
195 290 1.8 3.5 17 22
TYP MAX
THERMAL CHARACTERISTICS
Symbol RJC RJA UNIT C/W
0.30 31
1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471
Microsemi reserves the right to change, without notice, the specifications and information contained herein. 0.35 , THERMAL IMPEDANCE (C/W) 0.30 0.25 0.20 0.15 0.10 0.05 0 0.7 0.5 0.3
4 Starting Tj = +25C, L = 13.80mH, RG = 25, Peak IL = 10A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS -ID40A di/dt 700A/s VR 480V TJ 125C 6 Eon includes diode reverse recovery. See figures 18, 20. 7 Repetitive avalanche causes additional power losses that can be calculated as PAV = EAR*f
0.9
6-2006
Note:
PDM
050-7236 Rev B
t1 t2
JC
0.1 0.05 10-5 10-4
SINGLE PULSE
Duty Factor D = 1/t2 Peak TJ = PDM x ZJC + TC
Z
t
10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
Typical Performance Curves
ID, DRAIN CURRENT (AMPERES)
100 90 80 70 60 50 40 30 20 10 0 VGS = 15 &10 V
APT40N60B2CF(G)_LCF(G)
8V
TJ (C)
0.0136 Dissipated Power (Watts) 0.00308 0.00145 0.00948 0.231 0.0289 0.0988
TC (C)
0.158
7.5V
ZEXT
7V 6.5V 6V 5.5V
ZEXT are the external thermal impedances: Case to sink, sink to ambient, etc. Set to zero when modeling only the case to junction.
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
120
0 5 10 15 20 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE 1.40 1.30 1.20
VGS=10V
NORMALIZED TO VGS = 10V @ 20A
VDS> ID(ON) x RDS(ON) MAX. 250SEC. PULSE TEST @ <0.5 % DUTY CYCLE
ID, DRAIN CURRENT (AMPERES)
100 80 60
1.10 1.00 0.90 0.80
TJ = -55C
40
TJ = +25C
20 0
VGS=20V
TJ = +125C
0 2 4 6 8 10 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TRANSFER CHARACTERISTICS
0
ID, DRAIN CURRENT (AMPERES)
35 30 25 20 15 10 5 0 25
BVDSS, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED)
40
1.15
10 20 30 40 50 60 70 80 ID, DRAIN CURRENT (AMPERES) FIGURE 5, RDS(ON) vs DRAIN CURRENT
1.10
1.05
1.00
0.95
50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED)
3.0 2.5 2.0 1.5 1.0 0.5 0 -50
I = 20A
D
0 50 100 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE 1.2
0.90 -50
V
VGS(TH), THRESHOLD VOLTAGE (NORMALIZED)
GS
= 10V
1.1 1.0 0.9 0.8 0.7 0.6 -50
-25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
-25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
050-7236 Rev B
6-2006
30,000 ID, DRAIN CURRENT (AMPERES) 10,000 C, CAPACITANCE (pF)
APT40N60B2CF(G)_LCF(G)
Ciss
Graph removed
1,000
Coss
100 Crss 10
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 10, MAXIMUM SAFE OPERATING AREA VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 16
I = 40A
D
50 40 30 20 10 0 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
IDR, REVERSE DRAIN CURRENT (AMPERES)
200 100 TJ =+150C TJ =+25C 10
12
VDS=120V VDS=300V
8 VDS=480V 4
300 250 200 150 100 50 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGE vs GATE-TO-SOURCE VOLTAGE 180 0 160 140 td(off)
0
1 1.5 1.3 1.1 0.9 0.7 0.5 0.3 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE 80
V
DD G
= 400V
70 60
R
= 5
T = 125C J L = 100H
td(on) and td(off) (ns)
120 100 80 60 40 20 0 0
V
tr and tf (ns)
DD G
= 400V
R
= 5
50 40 30 20
T = 125C J L = 100H
tf tr
td(on)
10
50 60 70
10
20
FIGURE 14, DELAY TIMES vs CURRENT
2500
V
DD G
40 30 ID (A)
0
0
10
20
FIGURE 15, RISE AND FALL TIMES vs CURRENT 2500
40 30 ID (A)
50
60
70
= 400V
R
= 5
SWITCHING ENERGY (mJ)
L = 100H E diode reverse recovery.
on
includes
SWITCHING ENERGY (mJ)
2000
T = 125C
J
2000
Eon Eoff
1500
Eon
1500
1000
1000
V
DD
6-2006
= 400V
I = 40A
D
500
Eoff
500
T = 125C J L = 100H E diode reverse recovery.
on
050-7236 Rev B
includes
70 60 50 40 30 ID (A) FIGURE 16, SWITCHING ENERGY vs CURRENT 0 10 20
0
50 40 30 20 10 RG, GATE RESISTANCE (Ohms) FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE 0
0
Typical Performance Curves
90%
APT40N60B2CF(G)_LCF(G)
10%
Gate Voltage TJ125C
Gate Voltage
td(on) tr
Drain Current 90% 5% 10% 5% Drain Voltage
td(off) tf
Drain Voltage
TJ125C
90% 10% 0
Drain Current
Switching Energy
Switching Energy
Figure 18, Turn-on Switching Waveforms and Definitions
Figure 19, Turn-off Switching Waveforms and Definitions
APT30DQ60
VDD
ID
VDS
G D.U.T.
Figure 20, Inductive Switching Test Circuit
T-MAXTM (B2) Package Outline (B2CF)
e1 SAC: Tin, Silver, Copper
4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244)
TO-264 (L) Package Outline (LCF)
e1 SAC: Tin, Silver, Copper
4.60 (.181) 5.21 (.205) 1.80 (.071) 2.01 (.079) 19.51 (.768) 20.50 (.807) 3.10 (.122) 3.48 (.137) 5.79 (.228) 6.20 (.244)
Drain
20.80 (.819) 21.46 (.845)
Drain
25.48 (1.003) 26.49 (1.043)
4.50 (.177) Max. 0.40 (.016) 0.79 (.031)
2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084) 2.29 (.090) 2.69 (.106) 19.81 (.780) 21.39 (.842)
2.29 (.090) 2.69 (.106)
1.01 (.040) 1.40 (.055)
Gate Drain Source
0.48 (.019) 0.84 (.033) 2.59 (.102) 3.00 (.118)
Gate Drain Source
2.21 (.087) 2.59 (.102)
5.45 (.215) BSC 2-Plcs.
These dimensions are equal to the TO-247 without the mounting hole. Dimensions in Millimeters and (Inches)
5.45 (.215) BSC 2-Plcs.
Dimensions in Millimeters and (Inches)
Microsemi's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
050-7236 Rev B
0.76 (.030) 1.30 (.051) 2.79 (.110) 3.18 (.125)
6-2006
19.81 (.780) 20.32 (.800)

▲Up To Search▲

Price & Availability of APT40N60LCF

	To Download APT40N60LCF Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .